Invited Speakers
Xiaoyan Liu (Peking University)
Multi-physics simulations for nanoscale CMOS reliability
Andrea Padovani (University of Modena and Reggio Emilia)
Modeling Degradation and Breakdown in SiO2 and High-k Gate Dielectrics
Jeff Wu (TSMC)
Quantum Mechanical Modeling Techniques for High-Performance Low-k Amorphous Material Engineering: a Showcase for aBN
Tomoya Ono (Kobe University)
Calculation of the Green's function in the scattering region for first-principles electron-transport simulations